Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate

被引：0
|
作者：
Zhao, Linyuan [1 ,2 ]
Chen, Wenjie [1 ,2 ]
Liang, Renrong [1 ,2 ]
Liu, Yu [1 ,2 ]
Xu, Jun [1 ,2 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing, Peoples R China
[2] Beijing Natl Res Ctr Informat Sci & Technol BNRis, Beijing, Peoples R China
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年
基金：
中国国家自然科学基金;
关键词：
Gate-all-around nanowire junctionless transistor; auxiliary gate; hand-to-hand tunneling; energy band;
D O I：
10.1109/edssc.2019.8754335
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Gate-all-around nanowire junctionless transistor with an auxiliary gate (AG-GAAJLT) is proposed to restrain the band-to-band tunneling (BTBT) resulted in off-state leakage current in junctionless transistor. The device is investigated through three-dimensional (3D) numerical simulations. Results show that the AG-GAAJLT has seven orders of magnitude lower off-state current compared with the conventional gate-all-around junctionless transistor (C-GAAJLT). The effects of auxiliary gate voltage (V-AG) and distance between control gate and auxiliary gate (d(G-AG)) are studied, and the optimizations of V-AG and d(G-AG) are presented. This work provides a new method to solve the BTBT in GAAJLT.
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收藏
页数：3
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