HYDROGEN-ION SENSITIVE FIELD-EFFECT TRANSISTOR WITH TANTALUM OXIDE GATE

被引：0
|
作者：
AKIYAMA, T [1 ]
SUGANO, T [1 ]
NIKI, E [1 ]
机构：
[1] UNIV TOKYO,FAC ENGN,DEPT ELECT,BUNKYO KU,TOKYO 113,JAPAN
来源：
BUNSEKI KAGAKU | 1980年 / 29卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
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页码：584 / 588
页数：5
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