HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR

被引：601

|

作者：

LUNDSTROEM, I ^{[1
]}

SHIVARAMAN, S ^{[1
]}

SVENSSON, C ^{[1
]}

LUNDKVIST, L ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL,RES LAB ELECTR,GOTHENBURG,SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 02期

关键词：

D O I：

10.1063/1.88053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：55 / 57

页数：3

相关论文

共 50 条

[1] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR
LUNDSTROM, KI
SHIVARAMAN, MS
SVENSSON, CM
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3876 - 3881
[2] EXPERIMENTAL STUDIES OF THE LATERAL TRANSPORT OF HYDROGEN IN THIN PALLADIUM GATES OF HYDROGEN-SENSITIVE FIELD-EFFECT TRANSISTORS
ENQUIST, F
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) : 31 - 34
[3] FIELD-EFFECT TRANSISTOR SENSITIVE TO PENICILLIN
CARAS, S
JANATA, J
[J]. ANALYTICAL CHEMISTRY, 1980, 52 (12) : 1935 - 1937
[4] DEVELOPMENT OF CLEAND MOS FIELD-EFFECT TRANSISTOR
IWAMATSU, S
[J]. DENKI KAGAKU, 1982, 50 (03): : 267 - 271
[5] HYDROGEN-SENSITIVE PALLADIUM GATE MOS CAPACITORS
STEELE, MC
HILE, JW
MACIVER, BA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2537 - 2538
[6] SUSPENDED GATE FIELD-EFFECT TRANSISTOR SENSITIVE TO GASEOUS-HYDROGEN CYANIDE
LI, J
PETELENZ, D
JANATA, J
[J]. ELECTROANALYSIS, 1993, 5 (9-10) : 791 - 794
[7] HYDROGEN-ION SENSITIVE FIELD-EFFECT TRANSISTOR WITH TANTALUM OXIDE GATE
AKIYAMA, T
SUGANO, T
NIKI, E
[J]. BUNSEKI KAGAKU, 1980, 29 (09) : 584 - 588
[8] MECHANISM OF ION SENSITIVE FIELD-EFFECT TRANSISTOR
REVESZ, AG
[J]. THIN SOLID FILMS, 1977, 41 (02) : L43 - L47
[9] FIELD-EFFECT TRANSISTOR SENSITIVE TO DIPOLAR MOLECULES
BLACKBURN, GF
LEVY, M
JANATA, J
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (07) : 700 - 701
[10] A FIELD-EFFECT TRANSISTOR SENSITIVE TO THE PHENOBARBITAL ANION
COVINGTON, AK
HARBINSON, TR
SIBBALD, A
[J]. ANALYTICAL LETTERS PART A-CHEMICAL ANALYSIS, 1982, 15 (17): : 1423 - 1429

← 1 2 3 4 5 →