APPLICATION OF SPLIT-GATE AND DUAL-GATE FIELD-EFFECT TRANSISTOR DESIGNS TO INAS FIELD-EFFECT TRANSISTORS

被引：4
|
作者：
LONGENBACH, KF
BERESFORD, R
WANG, WI
机构：
[1] Department of Electrical Engineering, Microelectronics Sciences Labs Columbia University, New York
来源：
SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 09期
关键词：
D O I：
10.1016/0038-1101(90)90102-K
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：1211 / 1213
页数：3
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