Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices

被引：0
|
作者：
Kammarchedu, Vinay [1 ,2 ]
Butler, Derrick [1 ,2 ]
Rashid, Asmaul Smitha [1 ,2 ]
Ebrahimi, Aida [1 ,2 ,3 ]
Kayyalha, Morteza [1 ,2 ]
机构：
[1] Department of Electrical Engineering, The Pennsylvania State University, University Park,PA,16802, United States
[2] Materials Research Institute, The Pennsylvania State University, University Park,PA,16802, United States
[3] Department of Biomedical Engineering, The Pennsylvania State University, University Park,PA,16802, United States
来源：
arXiv |
关键词：
Disorder - Exotic properties - Graphenes - Nanohole size - Nanoholes - NanoPatterning - Periodic potentials - Size variation - Superlattice - Two-dimensional materials;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
54
引用
收藏
相关论文
共 50 条
  • [31] Gate-defined quantum dots on carbon nanotubes
    Biercuk, MJ
    Garaj, S
    Mason, N
    Chow, JM
    Marcus, CM
    NANO LETTERS, 2005, 5 (07) : 1267 - 1271
  • [32] Valley-symmetry-preserved transport in ballistic graphene with gate-defined carrier guiding
    Minsoo Kim
    Ji-Hae Choi
    Sang-Hoon Lee
    Kenji Watanabe
    Takashi Taniguchi
    Seung-Hoon Jhi
    Hu-Jong Lee
    Nature Physics, 2016, 12 : 1022 - 1026
  • [33] Specular Electron Focusing between Gate-Defined Quantum Point Contacts in Bilayer Graphene
    Ingla-Aynes, Josep
    Manesco, Antonio L. R.
    Ghiasi, Talieh S. S.
    Volosheniuk, Serhii
    Watanabe, Kenji
    Taniguchi, Takashi
    van der Zant, Herre S. J.
    NANO LETTERS, 2023, 23 (12) : 5453 - 5459
  • [34] Interplay of Aharonov-Bohm and Berry phases in gate-defined graphene quantum dots
    Heinl, Julia
    Schneider, Martin
    Brouwer, Piet W.
    PHYSICAL REVIEW B, 2013, 87 (24)
  • [35] Semimetallic features in quantum transport through a gate-defined point contact in bilayer graphene
    Lane, T. L. M.
    Knothe, A.
    Fal'ko, V., I
    PHYSICAL REVIEW B, 2019, 100 (11)
  • [36] A gate-defined silicon quantum dot molecule
    Liu, Hongwu
    Fujisawa, Toshimasa
    Inokawa, Hiroshi
    Ono, Yukinori
    Fujiwara, Akira
    Hirayama, Yoshiro
    APPLIED PHYSICS LETTERS, 2008, 92 (22)
  • [37] Quantum computation on gate-defined semiconductor quantum dots
    Li HaiOu
    Yao Bing
    Tu Tao
    Guo GuoPing
    CHINESE SCIENCE BULLETIN, 2012, 57 (16): : 1919 - 1924
  • [38] Low-Magnetic-Field Regime of a Gate-Defined Constriction in High-Mobility Graphene
    Veyrat, Louis
    Jordan, Anna
    Zimmermann, Katrin
    Gay, Frederic
    Watanabe, Kenji
    Taniguchi, Takashi
    Sellier, Hermann
    Sacepe, Benjamin
    NANO LETTERS, 2019, 19 (02) : 635 - 642
  • [39] Quantum computation on gate-defined semiconductor quantum dots
    LI HaiOu
    Science Bulletin, 2012, (16) : 1919 - 1924
  • [40] Probing valley phenomena with gate-defined valley splitters
    Luna, Juan Daniel Torres
    Vilkelis, Kostas
    Manesco, Antonio L. R.
    SCIPOST PHYSICS, 2025, 18 (02):
12345