Low-Magnetic-Field Regime of a Gate-Defined Constriction in High-Mobility Graphene

被引:13
|
作者
Veyrat, Louis [1 ]
Jordan, Anna [1 ]
Zimmermann, Katrin [1 ]
Gay, Frederic [1 ]
Watanabe, Kenji [2 ]
Taniguchi, Takashi [2 ]
Sellier, Hermann [1 ]
Sacepe, Benjamin [1 ]
机构
[1] Univ Grenoble Alpes, CNRS, Grenoble INP, Inst Neel, F-38000 Grenoble, France
[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3060044, Japan
基金
欧盟地平线“2020”;
关键词
Graphene; quantum point contact; snake states; quantum interferences; QUANTIZED CONDUCTANCE; POINT CONTACTS; QUANTUM; ELECTRON; STATES; TRANSMISSION; TRANSPORT;
D O I
10.1021/acs.nanolett.8b02584
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At a low field, the conductance exhibits Fabry-Perot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field B* corresponding to the cyclotron radius equal to the npn cavity length, Fabry-Perot resonances vanish, and snake trajectories are guided through the constriction with a characteristic set of conductance oscillations. Increasing further the magnetic field allows us to probe the Landau level spectrum in the constriction and unveil distortions due to the combination of confinement and deconfinement of Landau levels in a saddle potential. These observations are confirmed by numerical calculations.
引用
收藏
页码:635 / 642
页数:8
相关论文
共 50 条
  • [1] Gate-Defined Graphene Quantum Point Contact in the Quantum Hall Regime
    Nakaharai, S.
    Williams, J. R.
    Marcus, C. M.
    PHYSICAL REVIEW LETTERS, 2011, 107 (03)
  • [2] Orbital effects of a strong in-plane magnetic field on a gate-defined quantum dot
    Stano, Peter
    Hsu, Chen-Hsuan
    Camenzind, Leon C.
    Yu, Liuqi
    Zumbuehl, Dominik
    Loss, Daniel
    PHYSICAL REVIEW B, 2019, 99 (08)
  • [3] Electron spin redistribution in a Kondo quantum dot in the low-magnetic-field regime
    van der Wiel, WG
    Stopa, M
    De Franceschi, S
    Kouwenhoven, LP
    Tarucha, S
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 22 (1-3): : 538 - 541
  • [4] A HIGH-TEMPERATURE LOW-MAGNETIC-FIELD THETA PINCH
    DESILVA, AW
    KUNZE, HJ
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) : 2458 - &
  • [5] Large Low-Magnetic-Field Magnetocapacitance Effect and Spin Accumulation in Graphene Oxide
    Singh, Sukhjot
    Kumar, K. Santosh
    Bitla, Yugandhar
    Kori, Bhavani
    Hiremath, Bhagyashri
    Rampur, Mallikarjun
    Joshi, Rajeev S.
    IEEE TRANSACTIONS ON MAGNETICS, 2022, 58 (02)
  • [6] Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics
    Lee, Jongho
    Tao, Li
    Hao, Yufeng
    Ruoff, Rodney S.
    Akinwande, Deji
    APPLIED PHYSICS LETTERS, 2012, 100 (15)
  • [7] Multifractal Conductance Fluctuations in High-Mobility Graphene in the Integer Quantum Hall Regime
    Amin, Kazi Rafsanjani
    Nagarajan, Ramya
    Pandit, Rahul
    Bid, Aveek
    PHYSICAL REVIEW LETTERS, 2022, 129 (18)
  • [8] High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
    Hong, X.
    Posadas, A.
    Zou, K.
    Ahn, C. H.
    Zhu, J.
    PHYSICAL REVIEW LETTERS, 2009, 102 (13)
  • [9] g-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field
    Stano, Peter
    Hsu, Chen-Hsuan
    Serina, Marcel
    Camenzind, Leon C.
    Zumbuehl, Dominik M.
    Loss, Daniel
    PHYSICAL REVIEW B, 2018, 98 (19)
  • [10] Field effect in the quantum Hall regime of a high mobility graphene wire
    Barraud, C.
    Choi, T.
    Butti, P.
    Shorubalko, I.
    Taniguchi, T.
    Watanabe, K.
    Ihn, T.
    Ensslin, K.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (07)