Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices

被引:0
|
作者
Kammarchedu, Vinay [1 ,2 ]
Butler, Derrick [1 ,2 ]
Rashid, Asmaul Smitha [1 ,2 ]
Ebrahimi, Aida [1 ,2 ,3 ]
Kayyalha, Morteza [1 ,2 ]
机构
[1] Department of Electrical Engineering, The Pennsylvania State University, University Park,PA,16802, United States
[2] Materials Research Institute, The Pennsylvania State University, University Park,PA,16802, United States
[3] Department of Biomedical Engineering, The Pennsylvania State University, University Park,PA,16802, United States
来源
关键词
Disorder - Exotic properties - Graphenes - Nanohole size - Nanoholes - NanoPatterning - Periodic potentials - Size variation - Superlattice - Two-dimensional materials;
D O I
暂无
中图分类号
学科分类号
摘要
54
引用
收藏
相关论文
共 50 条
  • [21] Gate-defined Josephson junctions in magic-angle twisted bilayer graphene
    Folkert K. de Vries
    Elías Portolés
    Giulia Zheng
    Takashi Taniguchi
    Kenji Watanabe
    Thomas Ihn
    Klaus Ensslin
    Peter Rickhaus
    Nature Nanotechnology, 2021, 16 : 760 - 763
  • [22] Gate-defined superconducting channel in magic-angle twisted bilayer graphene
    Zheng, Giulia
    Portoles, Elias
    Mestre-Tora, Alexandra
    Perego, Marta
    Taniguchi, Takashi
    Watanabe, Kenji
    Rickhaus, Peter
    Vries, Folkert K. de
    Ihn, Thomas
    Ensslin, Klaus
    Iwakiri, Shuichi
    PHYSICAL REVIEW RESEARCH, 2024, 6 (01):
  • [23] Gate-defined Josephson junctions in magic-angle twisted bilayer graphene
    de Vries, Folkert K.
    Portoles, Elias
    Zheng, Giulia
    Taniguchi, Takashi
    Watanabe, Kenji
    Ihn, Thomas
    Ensslin, Klaus
    Rickhaus, Peter
    NATURE NANOTECHNOLOGY, 2021, 16 (07) : 760 - +
  • [24] Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-κ Layer as Gate Dielectric
    Sun, Jie
    Larsson, Marcus
    Xu, H. Q.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [25] Electron Collimation in Twisted Bilayer Graphene via Gate-Defined Moire Barriers
    Ren, Wei
    Zhang, Xi
    Zhu, Ziyan
    Khan, Moosa
    Watanabe, Kenji
    Taniguchi, Takashi
    Kaxiras, Efthimios
    Luskin, Mitchell
    Wang, Ke
    NANO LETTERS, 2024, 24 (40) : 12508 - 12514
  • [26] Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer WSe2
    Davari, S.
    Stacy, J.
    Mercado, A. M.
    Tull, J. D.
    Basnet, R.
    Pandey, K.
    Watanabe, K.
    Taniguchi, T.
    Hu, J.
    Churchill, H. O. H.
    PHYSICAL REVIEW APPLIED, 2020, 13 (05):
  • [27] Valley-symmetry-preserved transport in ballistic graphene with gate-defined carrier guiding
    Kim, Minsoo
    Choi, Ji-Hae
    Lee, Sang-Hoon
    Watanabe, Kenji
    Taniguchi, Takashi
    Jhi, Seung-Hoon
    Lee, Hu-Jong
    NATURE PHYSICS, 2016, 12 (11) : 1022 - +
  • [28] Effective medium theory for electron waves in a gate-defined quantum dot array in graphene
    Ren, Yinghui
    Gao, Yichun
    Wan, Pengcheng
    Wang, Qianjing
    Huang, Di
    Du, Junjie
    PHYSICAL REVIEW B, 2019, 100 (04)
  • [29] Gate-defined quantum dots in intrinsic silicon
    Angus, Susan J.
    Ferguson, Andrew J.
    Dzurak, Andrew S.
    Clark, Robert G.
    NANO LETTERS, 2007, 7 (07) : 2051 - 2055
  • [30] Erratum to: Multipole-based modal analysis of gate-defined quantum dots in graphene
    S. Mohsen Raeis-Zadeh
    Safieddin Safavi-Naeini
    The European Physical Journal B, 2013, 86