Gate-defined quantum dots in intrinsic silicon

被引：194
|
作者：
Angus, Susan J. [1 ]
Ferguson, Andrew J. [1 ]
Dzurak, Andrew S. [1 ]
Clark, Robert G. [1 ]
机构：
[1] Univ New S Wales, Ctr Excellence Quantum Comp Technol, Australian Res Council, Sydney, NSW, Australia
来源：
NANO LETTERS | 2007年 / 7卷 / 07期
关键词：
D O I：
10.1021/nl070949k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron (similar to 100 electrons) regime and the few-electron (similar to 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.
引用
收藏
页码：2051 / 2055
页数：5
相关论文
共 50 条
  • [1] Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon
    Mi, X.
    Cady, J. V.
    Zajac, D. M.
    Stehlik, J.
    Edge, L. F.
    Petta, J. R.
    [J]. APPLIED PHYSICS LETTERS, 2017, 110 (04)
  • [2] Quantum computation on gate-defined semiconductor quantum dots
    Li HaiOu
    Yao Bing
    Tu Tao
    Guo GuoPing
    [J]. CHINESE SCIENCE BULLETIN, 2012, 57 (16): : 1919 - 1924
  • [3] Gate-defined quantum dots on carbon nanotubes
    Biercuk, MJ
    Garaj, S
    Mason, N
    Chow, JM
    Marcus, CM
    [J]. NANO LETTERS, 2005, 5 (07) : 1267 - 1271
  • [4] Quantum computation on gate-defined semiconductor quantum dots
    LI HaiOu
    [J]. Science Bulletin, 2012, (16) : 1919 - 1924
  • [5] Quantum computation on gate-defined semiconductor quantum dots
    LI HaiOu YAO Bing TU Tao GUO GuoPing Key Laboratory of Quantum Information Chinese Academy of Sciences University of Science and Technology of China Hefei China
    [J]. Chinese Science Bulletin., 2012, 57 (16) - 1924
  • [6] A gate-defined silicon quantum dot molecule
    Liu, Hongwu
    Fujisawa, Toshimasa
    Inokawa, Hiroshi
    Ono, Yukinori
    Fujiwara, Akira
    Hirayama, Yoshiro
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (22)
  • [7] Electron confinement in graphene with gate-defined quantum dots
    Fehske, Holger
    Hager, Georg
    Pieper, Andreas
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (08): : 1868 - 1871
  • [8] Electron dynamics in graphene with gate-defined quantum dots
    Pieper, A.
    Heinisch, R. L.
    Fehske, H.
    [J]. EPL, 2013, 104 (04)
  • [9] Gate-defined coupled quantum dots in topological insulators
    Ertler, Christian
    Raith, Martin
    Fabian, Jaroslav
    [J]. PHYSICAL REVIEW B, 2014, 89 (07):
  • [10] Quantum Simulation of Antiferromagnetic Heisenberg Chain with Gate-Defined Quantum Dots
    van Diepen, C. J.
    Hsiao, T. -K.
    Mukhopadhyay, U.
    Reichl, C.
    Wegscheider, W.
    Vandersypen, L. M. K.
    [J]. PHYSICAL REVIEW X, 2021, 11 (04)
12345