Gate-defined quantum dots in intrinsic silicon

被引：194
|
作者：
Angus, Susan J. [1 ]
Ferguson, Andrew J. [1 ]
Dzurak, Andrew S. [1 ]
Clark, Robert G. [1 ]
机构：
[1] Univ New S Wales, Ctr Excellence Quantum Comp Technol, Australian Res Council, Sydney, NSW, Australia
来源：
NANO LETTERS | 2007年 / 7卷 / 07期
关键词：
D O I：
10.1021/nl070949k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron (similar to 100 electrons) regime and the few-electron (similar to 10 electrons) regime. Excited states in the bias spectroscopy provide evidence of quantum confinement. These results demonstrate that depletion gates are an effective technique for defining quantum dots in silicon.
引用
收藏
页码：2051 / 2055
页数：5
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