Ambipolar quantum dots in intrinsic silicon

被引：19
|
作者：
Betz, A. C. [1 ]
Gonzalez-Zalba, M. F. [1 ]
Podd, G. [1 ]
Ferguson, A. J. [2 ]
机构：
[1] Hitachi Cambridge Lab, Cambridge CB3 0HE, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 15期
基金：
英国工程与自然科学研究理事会;
关键词：
FIELD-EFFECT TRANSISTOR; SINGLE-ELECTRON; SPIN BLOCKADE; TRANSPORT; CHARGE; MANIPULATION; TEMPERATURE; BARRIERS; STATES;
D O I：
10.1063/1.4898704
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime. (C) 2014 AIP Publishing LLC.
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页数：4
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