A gate-defined silicon quantum dot molecule

被引：31
|
作者：
Liu, Hongwu [1 ,2 ,3 ]
Fujisawa, Toshimasa [1 ,2 ]
Inokawa, Hiroshi [1 ]
Ono, Yukinori [1 ]
Fujiwara, Akira [1 ]
Hirayama, Yoshiro [2 ,4 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] SORST JST, Chiyoda Ku, Tokyo 1020075, Japan
[3] Jilin Univ, Inst Atom & Mol Phys, Natl Lab Superhard Mat, Changchun 130012, Peoples R China
[4] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期
基金：
日本学术振兴会; 中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2938693
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report electron transport measurements of a silicon double dot formed in multigated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations. (C) 2008 American Institute of Physics.
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页数：3
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