A gate-defined silicon quantum dot molecule

被引：31

作者：

Liu, Hongwu ^{[1
,2
,3
]}

Fujisawa, Toshimasa ^{[1
,2
]}

Inokawa, Hiroshi ^{[1
]}

Ono, Yukinori ^{[1
]}

Fujiwara, Akira ^{[1
]}

Hirayama, Yoshiro ^{[2
,4
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] SORST JST, Chiyoda Ku, Tokyo 1020075, Japan

[3] Jilin Univ, Inst Atom & Mol Phys, Natl Lab Superhard Mat, Changchun 130012, Peoples R China

[4] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

基金：

日本学术振兴会; 中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2938693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electron transport measurements of a silicon double dot formed in multigated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations. (C) 2008 American Institute of Physics.

引用

页数：3

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