S-type switching characteristics from transverse transport in multiquantum well diodes

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[41] RESONANCE PROPERTIES OF S-TYPE DIODES BASED ON SYMMETRIC GALLIUM ARSENIDE STRUCTURES.
Brodovoi, V.A.
Gozak, A.Ch.
Peka, G.P.
Soviet physics. Semiconductors, 1981, 15 (05): : 524 - 526
[42] INVESTIGATION OF SULFUE-DOPED SILICON DIODES EXHIBITING S-TYPE NEGATIVE RESISTANCE
LEBEDEV, AA
MAMADALI.AT
SULTANOV, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 17 - &
[43] EFFECT OF ILLUMINATION ON THE PROPERTIES OF GOLD-DOPED GERMANIUM S-TYPE DIODES.
Zaletaev, N.B.
Kulikov, K.M.
Nikiforova, V.P.
Stafeev, V.I.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (01): : 23 - 25
[44] CURRENT-VOLTAGE CHARACTERISTICS OF S-TYPE GAAS - CR-DIODES WITH NEGATIVE-RESISTANCE UNDER REVERSE BIAS
KHLUDKOV, SS
TOLBANOV, OP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 963 - 964
[45] NOISE OSCILLATIONS OF CURRENT IN S-TYPE DIODES MADE OF CADMIUM-COMPENSATED SILICON
DUSHKIN, VA
KOVARSKI.BY
MURYGIN, VI
RAKITIN, VV
STAFEEV, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1076 - &
[46] KINETICS OF THE CHARGING OF IMPURITY LEVELS IN S-TYPE DIODES MADE OF GAAS-O
PTASHCHENKO, AA
MARYUTIN, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 561 - 562
[47] RESONANCE AND GENERATION OF OSCILLATIONS IN NICKEL-DOPED GALLIUM ARSENIDE S-TYPE DIODES
MURYGIN, VI
RUBIN, VS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (06): : 765 - &
[48] KINETICS OF THE CHARGING OF IMPURITY LEVELS IN S-TYPE DIODES MADE OF GAAS:O.
PTASHCHENKO, A.A.
MARYUTIN, V.I.
1982, V 16 (N 5): : 561 - 562
[49] RESONANCE PROPERTIES OF S-TYPE DIODES BASED ON SYMMETRIC GALLIUM-ARSENIDE STRUCTURES
BRODOVOI, VA
GOZAK, AC
PEKA, GP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 524 - 526
[50] SENSITIVITY OF S-TYPE PHOTO-DIODES IN THE PRESENCE OF A CONCENTRATION GRADIENT OF DEEP CENTERS
ADAMYAN, ZN
ARUTYUNYAN, VM
GASPARYAN, FV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (10): : 1094 - 1096

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