共 50 条
- [1] INVESTIGATION OF S-TYPE DIODES MADE OF PALLADIUM-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 228 - 229
- [2] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1537 - 1539
- [3] PLATINUM-DOPED SILICON DIODES EXHIBITING NEGATIVE RESISTANCE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (04): : 530 - &
- [4] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1537 - 1539
- [5] PHOTOELECTRIC PROPERTIES OF S-TYPE DIODES MADE OF CHROMIUM-DOPED GAAS AND EXHIBITING NEGATIVE-RESISTANCE UNDER A REVERSE BIAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1434 - 1435
- [6] TRANSIENT CHARACTERISTICS OF SILICON DIODES EXHIBITING A NEGATIVE RESISTANCE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 954 - +
- [7] NEGATIVE CONDUCTANCE OF S-TYPE DIODES MADE OF SILICON AND GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 683 - 684
- [8] LOW-FREQUENCY SPONTANEOUS OSCILLATIONS OF CURRENT IN S-TYPE SILICON DIODES DOPED WITH S AND ZN SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (09): : 1533 - 1536
- [9] INVESTIGATION OF GALLIUM-PHOSPHIDE S-TYPE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 887 - 889
- [10] CADMIUM-DOPED SILICON DIODES WITH NEGATIVE RESISTANCE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1543 - &