PHOTOELECTRIC PROPERTIES OF S-TYPE DIODES MADE OF CHROMIUM-DOPED GAAS AND EXHIBITING NEGATIVE-RESISTANCE UNDER A REVERSE BIAS

被引：0

作者：

KHLUDKOV, SS

TOLBANOV, OP

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1434 / 1435

页数：2

共 6 条

[1] CURRENT-VOLTAGE CHARACTERISTICS OF S-TYPE GAAS - CR-DIODES WITH NEGATIVE-RESISTANCE UNDER REVERSE BIAS
KHLUDKOV, SS
TOLBANOV, OP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 963 - 964
[2] INVESTIGATION OF S-TYPE DIODES MADE OF CHROMIUM-DOPED SEMI-INSULATING GAAS
ALFEROV, ZI
ERGAKOV, VK
KOROLKOV, VI
NIKITIN, VG
TRETYAKO.DN
YAKOVENK.AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1748 - &
[3] INVESTIGATION OF SULFUE-DOPED SILICON DIODES EXHIBITING S-TYPE NEGATIVE RESISTANCE
LEBEDEV, AA
MAMADALI.AT
SULTANOV, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 17 - &
[4] NEGATIVE RESISTANCE IN CHROMIUM-DOPED GAAS P-I-N DIODES
SELWAY, PR
NICOLLE, WM
JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4087 - &
[5] ELECTRICAL-PROPERTIES OF S-TYPE DIODES MADE OF MERCURY-DOPED GERMANIUM
VIKULIN, IM
KURMASHEV, SD
ANDREEV, VI
GINKO, VI
PROKHOROV, LS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (01): : 94 - 96
[6] PHOTO-ELECTRIC PROPERTIES OF S-TYPE DIODES MADE OF MERCURY-DOPED GERMANIUM
VIKULIN, IM
KURMASHEV, SD
ANDREEV, VI
GINKO, VI
PROKHOROV, LS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 270 - 272