S-type switching characteristics from transverse transport in multiquantum well diodes

被引：0

作者：

机构：

来源：

| 1600年 / 72期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] S-TYPE SWITCHING IN SEMICONDUCTOR STRUCTURES AT HIGH-CURRENT DENSITIES
KARDOSYSOEV, AF
PANYUTIN, EA
CHASHNIKOV, IG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 882 - 884
[32] SWITCHING DUE TO LOCAL APPEARANCE OF AN S-TYPE NEGATIVE DIFFERENTIAL RESISTANCE
KOSTYLEV, SA
KODZHESPIROVA, IF
SHKUT, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (12): : 1315 - 1318
[33] ND ISOTOPIC CHARACTERISTICS OF S-TYPE AND I-TYPE GRANITES
MCCULLOCH, MT
CHAPPELL, BW
EARTH AND PLANETARY SCIENCE LETTERS, 1982, 58 (01) : 51 - 64
[34] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON.
Azimov, S.A.
Karimov, F.R.
Lebedev, A.A.
Mamadalimov, A.T.
Yunusov, M.S.
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1537 - 1539
[35] EFFECT OF ILLUMINATION ON PROPERTIES OF GOLD-DOPED GERMANIUM S-TYPE DIODES
ZALETAEV, NB
KULIKOV, KM
NIKIFOROVA, VP
STAFEEV, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (01): : 23 - 25
[36] SOME PROPERTIES OF S-TYPE DIODES MADE OF SEMIINSULATING GALLIUM-ARSENIDE
EGIAZARYAN, GA
STAFEEV, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 334 - 336
[37] S-TYPE AND N-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES MADE OF TITANIUM-COMPENSATED GALLIUM-ARSENIDE
BEKMURATOV, MF
MURYGIN, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (12): : 2017 - 2018
[38] NEGATIVE CONDUCTANCE OF S-TYPE DIODES MADE OF SILICON AND GALLIUM-ARSENIDE
SOLOVEV, VF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 683 - 684
[39] SIMPLE PC PROGRAM CALCULATES MODIFIED S-TYPE WELL TRAJECTORY
HASHEM, AA
OIL & GAS JOURNAL, 1995, 93 (08) : 54 - &
[40] Design of the optimum product specifications for S-type quality characteristics
Cho, BR
Phillips, MD
INTERNATIONAL JOURNAL OF PRODUCTION RESEARCH, 1998, 36 (02) : 459 - 474

← 1 2 3 4 5 →