共 50 条
- [21] S-TYPE DIODES MADE OF IRIDIUM-COMPENSATED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1200 - 1201
- [22] NEURISTOR LINE MADE OF S-TYPE GERMANIUM-DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (11): : 1251 - 1254
- [24] NEGATIVE CAPACITANCE OF DEVICES WITH S-TYPE CHARACTERISTICS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 619 - &
- [25] SOME INVESTIGATIONS OF S-TYPE DIODES MADE OF SEMIINSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1389 - +
- [26] INVESTIGATION OF S-TYPE DIODES MADE OF PALLADIUM-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 228 - 229
- [27] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1537 - 1539
- [28] INFLUENCE OF A QUANTIZING MAGNETIC FIELD ON S-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES MADE OF N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2066 - &
- [30] S-TYPE CURRENT-VOLTAGE CHARACTERISTICS IN SILICON UKRAINSKII FIZICHESKII ZHURNAL, 1984, 29 (01): : 123 - 130