NEURISTOR LINE MADE OF S-TYPE GERMANIUM-DIODES

被引：0
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作者：
BATALINA, MA
BURLAKOV, ID
VLASOV, AN
STAFEEV, VI
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 11期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1251 / 1254
页数：4
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