NEURISTOR LINE MADE OF S-TYPE GERMANIUM-DIODES

被引：0
|
作者：
BATALINA, MA
BURLAKOV, ID
VLASOV, AN
STAFEEV, VI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1251 / 1254
页数：4
相关论文
共 50 条
  • [21] METAL-INSULATOR GERMANIUM-DIODES INCORPORATING MOLECULAR MULTILAYER DIELECTRICS
    SHUTT, JD
    RICKERT, SE
    JOURNAL OF MOLECULAR ELECTRONICS, 1988, 4 (04): : 201 - 205
  • [22] INVESTIGATION OF S-TYPE DIODES MADE OF CHROMIUM-DOPED SEMI-INSULATING GAAS
    ALFEROV, ZI
    ERGAKOV, VK
    KOROLKOV, VI
    NIKITIN, VG
    TRETYAKO.DN
    YAKOVENK.AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1748 - &
  • [23] ELECTROLUMINESCENCE OF S-TYPE DIODES MADE OF IRON- AND NICKEL-DOPED GALLIUM ARSENIDE
    MURYGIN, VI
    RUBIN, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 917 - +
  • [24] A BUFFER RING FOR EDGE PROTECTION OF HIGH-PURITY GERMANIUM-DIODES
    ISHII, M
    OHSHIMA, M
    MATSUZAKI, T
    TAKETANI, H
    NUCLEAR INSTRUMENTS & METHODS, 1980, 171 (01): : 67 - 70
  • [25] FOR RESPONSE TO LONGER WAVELENGTHS THAN SILICON TRY GERMANIUM-DIODES WITH SIMILIAR CHARACTERISTICS
    MATH, I
    LASER FOCUS WITH FIBEROPTIC TECHNOLOGY, 1977, 13 (11): : 91 - &
  • [26] SOME FEATURES OF PHOTOELECTRIC PROCESSES IN S-TYPE DIODES
    DULDIER, VN
    PETRUSEV.VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1429 - &
  • [27] INVESTIGATION OF GALLIUM-PHOSPHIDE S-TYPE DIODES
    ANISIMOV.ID
    KOGAN, LM
    RUDOVOL, TV
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 887 - 889
  • [28] INVESTIGATION OF TRANSIENT PROCESSES IN PHOTOSENSITIVE S-TYPE DIODES
    LEBEDEV, AA
    MAMADALI.AT
    SULTANOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 195 - 198
  • [29] INFLUENCE OF A QUANTIZING MAGNETIC FIELD ON S-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES MADE OF N-TYPE INSB
    SAIMKULO.ZA
    FILATOVA, ES
    YAGODKIN, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2066 - &
  • [30] SELECTIVE AND OSCILLATORY PROPERTIES OF S-TYPE GALLIUM ARSENIDE DIODES
    EGIAZARY.GA
    MATVEENK.YA
    MURYGIN, VI
    RUBIN, VS
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1271 - &
12345