NEURISTOR LINE MADE OF S-TYPE GERMANIUM-DIODES

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作者：

BATALINA, MA

BURLAKOV, ID

VLASOV, AN

STAFEEV, VI

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 11期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1251 / 1254

页数：4

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