共 50 条
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- [3] INVESTIGATION OF S-TYPE DIODES MADE OF CHROMIUM-DOPED SEMI-INSULATING GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1748 - &
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- [5] NEURISTOR LINE MADE OF S-TYPE GERMANIUM-DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (11): : 1251 - 1254
- [6] NEGATIVE PHOTOCONDUCTIVITY OF S-TYPE GAAS-CR DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 51 - 53
- [7] SOME INVESTIGATIONS OF S-TYPE DIODES MADE OF SEMIINSULATING GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1389 - +
- [8] INVESTIGATION OF S-TYPE DIODES MADE OF PALLADIUM-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 228 - 229
- [9] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1537 - 1539
- [10] INVESTIGATION OF S-TYPE DIODES MADE OF RHODIUM-DOPED SILICON. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 8 (12): : 1537 - 1539