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- [23] INVESTIGATION OF PHOTOSENSITIVITY OF S-TYPE DIODES BASED ON P-GA1-XALXAS-I-GAAS-N-GAAS HETEROJUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 755 - 756
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- [25] ROLE OF DEEP TRAPPING LEVELS IN FORMATION OF CURRENT-VOLTAGE CHARACTERISTICS OF S-TYPE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 162 - 164
- [26] INFLUENCE OF A QUANTIZING MAGNETIC FIELD ON S-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF DIODES MADE OF N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2066 - &
- [27] SELECTIVE AND OSCILLATORY PROPERTIES OF S-TYPE GALLIUM ARSENIDE DIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1271 - &
- [28] INVESTIGATION OF TRANSIENT PROCESSES IN PHOTOSENSITIVE S-TYPE DIODES. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (02): : 195 - 198
- [29] ACCIDENTAL SWITCHING TIME OF SEMICONDUCTOR DIODES WITH S-TYPE CHARACTERISTICS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (02): : 143 - 145