Ga-As-H-Cl VAPOR PHASE EPITAXIAL GROWTH SYSTEM.

被引：0
|
作者：
Han, H.G. [1 ]
Rao, Y.K. [1 ]
机构：
[1] Univ of Washington, Dep of Materials, Science & Engineering, Seattle,, WA, USA, Univ of Washington, Dep of Materials Science & Engineering, Seattle, WA, USA
来源：
Metallurgical transactions. B, Process metallurgy | 1985年 / 16 B卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：97 / 105
相关论文
共 50 条
  • [21] HIGH-THROUGHPUT ASCL3/GA/H2 VAPOR-PHASE EPITAXIAL SYSTEM FOR GROWTH OF EXTREMELY UNIFORM MULTILAYER GAAS STRUCTURES
    COX, HM
    PRIOR, AS
    KERAMIDAS, VG
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 133 - 140
  • [22] THERMODYNAMICS OF GAS-PHASE EQUILIBRIA - GA-AS-CL-H SYSTEM
    HURLE, DTJ
    MULLIN, JB
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, S : 241 - &
  • [23] METALORGANIC VAPOR-PHASE-EPITAXIAL GROWTH OF FE-DOPED IN0.53GA0.47AS
    TELL, B
    KOREN, U
    MILLER, BI
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1172 - 1175
  • [24] VAPOR-PHASE GROWTH OF EPITAXIAL GA1-XINXSB BY OPEN-TUBE METHOD
    NAKATANI, I
    MASUMOTO, K
    TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS, 1978, 19 (08): : 454 - 456
  • [25] Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
    Leach, J. H.
    Udwary, K.
    Rumsey, J.
    Dodson, G.
    Splawn, H.
    Evans, K. R.
    APL MATERIALS, 2019, 7 (02):
  • [26] VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAAS WITH THE ASCL3-GA-N2 SYSTEM
    LIN, LY
    LIN, YW
    ZHONG, XR
    ZHANG, YY
    LI, HL
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 344 - 349
  • [27] Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3
    Imade, Mamoru
    Bu, Yuan
    Sumi, Tomoaki
    Kitamoto, Akira
    Yoshimura, Masashi
    Sasaki, Takatomo
    Imsemura, Masashi
    Mori, Yusuke
    JOURNAL OF CRYSTAL GROWTH, 2012, 350 (01) : 56 - 59
  • [28] Equilibrium Composition of the Gaseous Phase in the B-P-Cl-Br-H System.
    Milovanova, M.V.
    Krenev, V.A.
    1978, 14 (11): : 2010 - 2012
  • [29] A STUDY OF THE GA-H-CL SYSTEM
    VORONIN, VA
    PROKHOROV, VA
    CHUB, M
    GOLIUSOV, VA
    KLYMKIV, AV
    INORGANIC MATERIALS, 1986, 22 (09) : 1270 - 1272
  • [30] GAAS VAPOR-PHASE EPITAXIAL-GROWTH
    HARADA, H
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1972, 20 (11-1): : 1077 - 1086
12345