GAAS VAPOR-PHASE EPITAXIAL-GROWTH

被引：0
|
作者：
HARADA, H [1 ]
机构：
[1] MUSASHINO ELECT COMMUN LAB, INTEGRATED ELECTR DEV DIV, SEMICOND DEVICE SECT, MUSASHINO, JAPAN
来源：
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES | 1972年 / 20卷 / 11-1期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1077 / 1086
页数：10
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