Improvement of the safe operating area for p-channel insulated-gate bipolar transistors (IGBTs)

被引：0

作者：

Ueno, Katsunori ^{[1
]}

Hoshi, Yasuyuki ^{[1
]}

Iwamuro, Noriyuki ^{[1
]}

Kumagai, Naoki ^{[1
]}

Hashimoto, Osamu ^{[1
]}

机构：

[1] Fuji Electric Corp, Nagano, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 6 A期

关键词：

Transistors; Bipolar;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：966 / 969

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