Improvement of the safe operating area for p-channel insulated-gate bipolar transistors (IGBTs)

被引：0
|
作者：
Ueno, Katsunori [1 ]
Hoshi, Yasuyuki [1 ]
Iwamuro, Noriyuki [1 ]
Kumagai, Naoki [1 ]
Hashimoto, Osamu [1 ]
机构：
[1] Fuji Electric Corp, Nagano, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 6 A期
关键词：
Transistors; Bipolar;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：966 / 969
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