SILICON N-CHANNEL NORMALLY-OFF INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：2
|
作者：
OHWADA, A
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 08期
关键词：
D O I：
10.1143/JJAP.7.862
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：862 / +
页数：1
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