Nitrogen implantation in 4H and 6H-SiC

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LETI-CEA, Département de Micro-technologies, CEA-Grenoble, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France ^{[1
]}

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Mater Sci Eng B Solid State Adv Technol | / 368-372期

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引用

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[41] Optimization of 2H, 4H and 6H-SiC MESFETs for high-frequency applications
Bertilsson, K
Nilsson, HE
PHYSICA SCRIPTA, 2002, T101 : 75 - 77
[42] Hydrogen passivation of nitrogen in 6H-SiC
Theys, B
Gendron, F
Porte, C
Bringuier, E
Dolin, C
JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) : 6346 - 6347
[43] Interaction of nitrogen with 6H-SiC surfaces
Van Elsbergen, V
Rohleder, M
Monch, W
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 457 - 462
[44] Activation of nitrogen implants in 6H-SiC
J. N. Pan
J. A. Cooper
M. R. Melloch
Journal of Electronic Materials, 1997, 26 : 208 - 211
[45] Nitrogen doping concentration as determined by photoluminescence in 4H- and 6H-SiC
Ivanov, IG
Hallin, C
Henry, A
Kordina, O
Janzen, E
JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3504 - 3508
[46] Excitation spectra of nitrogen bound excitons in 4H-and 6H-SiC
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Henry, A
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JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2028 - 2032
[47] Nitrogen-related point defect in 4H and 6H SiC
Zvanut, M. E.
van Tol, J.
PHYSICA B-CONDENSED MATTER, 2007, 401 : 73 - 76
[48] The effect of Si:C source ratio on SiO2/SiC interface state density for nitrogen doped 4H and 6H-SIC
Chung, GY
Tin, CC
Won, JH
Williams, JR
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1097 - 1100
[49] High voltage Schottky barrier diodes on p-type 4H and 6H-SiC
Raghunathan, R
Baliga, BJ
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 933 - 936
[50] Electron transport modeling in the inversion layers of 4H and 6H-SiC MOSFETs on implanted regions
Zeng, YA
White, MH
Das, MK
SOLID-STATE ELECTRONICS, 2005, 49 (06) : 1017 - 1028

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