Nitrogen implantation in 4H and 6H-SiC

被引：0
|
作者：
LETI-CEA, Département de Micro-technologies, CEA-Grenoble, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
机构：
来源：
Mater Sci Eng B Solid State Adv Technol | / 368-372期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Optimization of 2H, 4H and 6H-SiC high speed vertical MESFETs
    Bertilsson, K
    Nilsson, HE
    DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 1254 - 1257
  • [22] Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC
    Bertilsson, K
    Dubaric, E
    Nilsson, HE
    Hjelm, M
    Petersson, CS
    DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 1283 - 1286
  • [23] Ion - Implantation and annealing of 6H-SiC
    Heindl, J
    Strunk, HP
    Heft, A
    Bachmann, T
    Glaser, E
    Wendler, E
    Wesch, W
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 435 - 438
  • [24] Mapping of 6H-SiC for implantation control
    Morvan, E
    Godignon, P
    Montserrat, J
    Flores, D
    Jorda, X
    Vellvehi, M
    DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 335 - 340
  • [25] Mapping of 6H-SiC for implantation control
    Morvan, E.
    Godignon, P.
    Montserrat, J.
    Flores, D.
    Jorda, X.
    Vellvehi, M.
    Diamond and Related Materials, 1999, 8 (02): : 335 - 340
  • [26] High dose implantation in 6H-SiC
    Heera, V
    Skorupa, W
    Stoemenos, J
    Pécz, B
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 579 - 582
  • [27] High dose implantation in 6H-SiC
    Heera, V.
    Skorupa, W.
    Stoemenos, J.
    Pécz, B.
    Materials Science Forum, 2001, 353-356 : 579 - 582
  • [28] Phosphorus and boron implantation in 6H-SiC
    Rao, MV
    Gardner, JA
    Chi, PH
    Holland, OW
    Kelner, G
    Kretchmer, J
    Ghezzo, M
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (10) : 6635 - 6641
  • [29] 4H polytype grain formation in PVT-grown 6H-SiC ingots
    Fujimoto, T
    Katsuno, M
    Ohtani, N
    Aigo, T
    Yashiro, H
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 47 - 50
  • [30] 4H polytype grain formation in PVT-grown 6H-SiC ingots
    Fujimoto, T.
    Katsuno, M.
    Ohtani, N.
    Aigo, T.
    Yashiro, H.
    Materials Science Forum, 2002, 389-393 (01) : 47 - 50
12345