Optimization of 2H, 4H and 6H-SiC high speed vertical MESFETs

被引：7
|
作者：
Bertilsson, K [1 ]
Nilsson, HE
机构：
[1] Mid Sweden Univ, Dept Informat Technol & Media, S-85170 Sundsvall, Sweden
[2] KTH, Dept Solid State Elect, Electrum, S-16440 Kista, Sweden
来源：
DIAMOND AND RELATED MATERIALS | 2002年 / 11卷 / 3-6期
关键词：
MESFET; device modeling; SiC;
D O I：
10.1016/S0925-9635(01)00550-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon carbide vertical MESFET devices are well suited for high speed and high power electronic devices. In this work we have optimized the geometry of vertical MESFETs for microwave applications, using iterative two-dimensional simulations. Relevant parasitics are included in the simulations to investigate the performance of realistic devices. The state of the art device has f(T)=7 GHz and we show that vertical MESFETs fabricated with traditional technology are totally limited by parasitics. Two different approaches to reduce the parasitics in the vertical MESFET are proposed where f(T) increases significantly. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1254 / 1257
页数：4
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