Optimization of 2H, 4H and 6H-SiC MESFETs for high-frequency applications

被引：0

作者：

Bertilsson, K ^{[1
]}

Nilsson, HE

机构：

[1] Mid Sweden Univ, Dept Informat Technol & Media, SE-85170 Sundsvall, Sweden

[2] Kungl Tekniska Hogskolan KTH, Dept Solid State Elect, SE-16440 Kista, Sweden

来源：

PHYSICA SCRIPTA | 2002年 / T101卷

关键词：

D O I：

10.1238/Physica.Topical.101a00075

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Silicon carbide MESFET devices are well suited for high speed, high power and high temperature electronics due to high saturation velocity, high critical electrical field, good thermal conductivity and large band-gap. Optimization of a high performance device demands a substantial number of numerical simulations, where several different design parameters have to be investigated thoroughly. In this work, we optimize the geometry of lateral MESFETs for maximal unity current-gain frequency (f(T)) using iterative 2-dimensional simulations. We also present a comparison of performance for individually optimized devices, realized with lithographic resolutions ranging from 0.2 to 2 mum in different SiC polytypes.

引用

页码：75 / 77

页数：3

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