4H polytype grain formation in PVT-grown 6H-SiC ingots

被引：7

作者：

Fujimoto, T ^{[1
]}

Katsuno, M ^{[1
]}

Ohtani, N ^{[1
]}

Aigo, T ^{[1
]}

Yashiro, H ^{[1
]}

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Lab, Futtsu, Chiba 2938511, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

crystal orientation; multi-domain ingot; X-ray pole figure;

D O I：

10.4028/www.scientific.net/MSF.389-393.47

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Multi-domained PVT (physical vapor transport)-grown 6H-SiC ingots, in which large 4H-SiC grains exist with their crystal directions strongly misoriented with regard to the single crystal matrix geometry, are investigated extensively from the viewpoint of the generation mechanism of the misoriented grains. Microstructural observations reveal that there exist a number of fine SiC inclusions inside the 6H-SiC matrix. We suggest that these inclusions are likely to be the embryos of the misoriented grains.

引用

页码：47 / 50

页数：4

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