TRANSMISSION ELECTRON MICROSCOPY STUDY OF DEFECTS IN Sn-DOPED GaAs FILMS GROWN BY MOLECULAR BEAM EPITAXY.

被引：0
|
作者：
Chen, S.H.
Carter, C.B.
Enquist, P.
机构：
[1] Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, 14853, NY, United States
[2] School of Electrical Engineering, Phillips Hall, Cornell University, Ithaca, 14853, NY, United States
来源：
Applied physics. A, Solids and surfaces | 1987年 / A44卷 / 02期
关键词：
MICROSCOPES; ELECTRON - Applications - MOLECULAR BEAM EPITAXY - SEMICONDUCTING FILMS - Growth - SPECTROSCOPY; X-RAY - Applications - TIN AND ALLOYS;
D O I：
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摘要：
Films of GaAs, heavily doped with Sn, which have been grown by molecular-beam epitaxy are found to contain single-crystal Sn particles situated in the near surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive X-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.
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页码：143 / 151
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