TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：39
|
作者：
MORKOC, H
CHO, AY
RADICE, C
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 09期
关键词：
D O I：
10.1063/1.328324
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4882 / 4884
页数：3
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