COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:31
|
作者
MIHARA, M
NOMURA, Y
MANNOH, M
YAMANAKA, K
NARITSUKA, S
SHINOZAKI, K
YUASA, T
机构
关键词
D O I
10.1063/1.332930
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3760 / 3764
页数:5
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    WICKS, G
    WANG, WI
    WOOD, CEC
    EASTMAN, LF
    RATHBUN, L
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5792 - 5796
  • [2] PHOTOLUMINESCENCE SPECTRA OF HIGHLY DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    OGAWA, J
    TAMAMURA, K
    AKIMOTO, K
    MORI, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2765 - 2768
  • [3] LOW-TEMPERATURE PHOTOLUMINESCENCE IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    REYNOLDS, DC
    BAJAJ, KK
    LITTON, CW
    SINGH, J
    YU, PW
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1643 - 1646
  • [4] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    STALL, RA
    ZILKO, J
    SWAMINATHAN, V
    SCHUMAKER, N
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
  • [5] SI INCORPORATION IN ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    DRUMMOND, TJ
    LYONS, WG
    FISCHER, R
    THORNE, RE
    MORKOC, H
    HOPKINS, CG
    EVANS, CA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04): : 957 - 960
  • [6] DEFECT-RELATED EMISSIONS IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    MIHARA, M
    NOMURA, Y
    MANNOH, M
    YAMANAKA, K
    NARITSUKA, S
    SHINOZAKI, K
    YUASA, T
    ISHII, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3765 - 3768
  • [7] A NEW COMPOSITION CONTROL METHOD OF ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY
    KAWABE, M
    MATSUURA, N
    TODA, K
    INUZUKA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 439 - 440
  • [8] SI(AS) RELATED PHOTOLUMINESCENCE EMISSIONS IN LOW-TEMPERATURE ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    SOUZA, PL
    RAO, EVK
    ALEXANDRE, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) : 1498 - 1501
  • [9] CARBON INCORPORATION IN GAAS AND ALXGA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    GIANNINI, C
    GERARDI, C
    TAPFER, L
    FISCHER, A
    PLOOG, KH
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 77 - 81
  • [10] THERMAL-CONVERSION OF ALXGA1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    ADACHI, S
    YAMAHATA, S
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1265 - 1267