LAG PROPERTIES OF SILICON p-i-n PHOTODIODES.

被引：0
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作者：
Trishenkov, M.A.
Khakuashev, P.Ye.
机构：
来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1984年 / 29卷 / 07期
关键词：
MATHEMATICAL TECHNIQUES - Numerical Analysis - RADIATION DETECTORS - Theory - SEMICONDUCTING SILICON - Testing;
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摘要：
A method is presented for calculating the transient characteristics of the photocurrent during carrier drift in the space-charge region of a photodiode in the most general case of an arbitrary absorption coefficient, field distribution, and illumination on the side of n- or p-layer. The calculation reduces to that of solving a system of transcendental equations containing quadratures. Numerical calculations of the transient characteristics are made for silicon p-i-n photodiodes. An analysis of these characteristics shows that in the cases of practical importance they can be approximated by one exponential relationship with a time constant t//0//. //6//3; therefore, the lag of silicon p-i-n photodiodes can be described by this time constant. Graphs showing its calculation are presented.
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页码：131 / 140
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