LAG PROPERTIES OF SILICON p-i-n PHOTODIODES.

被引：0
|
作者：
Trishenkov, M.A.
Khakuashev, P.Ye.
机构：
来源：
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1984年 / 29卷 / 07期
关键词：
MATHEMATICAL TECHNIQUES - Numerical Analysis - RADIATION DETECTORS - Theory - SEMICONDUCTING SILICON - Testing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method is presented for calculating the transient characteristics of the photocurrent during carrier drift in the space-charge region of a photodiode in the most general case of an arbitrary absorption coefficient, field distribution, and illumination on the side of n- or p-layer. The calculation reduces to that of solving a system of transcendental equations containing quadratures. Numerical calculations of the transient characteristics are made for silicon p-i-n photodiodes. An analysis of these characteristics shows that in the cases of practical importance they can be approximated by one exponential relationship with a time constant t//0//. //6//3; therefore, the lag of silicon p-i-n photodiodes can be described by this time constant. Graphs showing its calculation are presented.
引用
收藏
页码：131 / 140
相关论文
共 50 条
  • [41] Silicon p-i-n Junction Fibers
    He, Rongrui
    Day, Todd D.
    Krishnamurthi, Mahesh
    Sparks, Justin R.
    Sazio, Pier J. A.
    Gopalan, Venkatraman
    Badding, John V.
    ADVANCED MATERIALS, 2013, 25 (10) : 1461 - 1467
  • [42] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Chen, YJ
    PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 95 - 98
  • [43] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Hsu, RT
    Wu, YH
    Chen, YJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7A): : 4249 - 4252
  • [44] A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths
    Loquai, Sven
    Bunge, Christian-Alexander
    Ziemann, Olaf
    Schmauss, Bernhard
    Kruglov, Roman
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2010, 28 (18) : 2646 - 2653
  • [45] Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers
    Colace, Lorenzo
    Assanto, Gaetano
    Fulgoni, Dom
    Nash, Lee
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2008, 26 (13-16) : 2954 - 2959
  • [46] P-I-N junction in Silicon Nanowires
    Foo, K. L.
    Rusli
    Yu, M. B.
    Singh, N.
    Buddharaju, K. D.
    Sun, Y. S.
    Chan, L.
    Ng, C. M.
    2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 1137 - +
  • [47] The thickness and width of the intrinsic region effected electrical properties of GaAs p-i-n photodiodes
    Wen, Jing-Tao
    Chen, Qiang-Long
    Guo, Pan
    MICROELECTRONICS RELIABILITY, 2023, 151
  • [48] Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes
    Juodawlkis, PW
    O'Donnell, FJ
    Hargreaves, JJ
    Oakley, DC
    Napoleone, A
    Groves, SH
    Mahoney, LJ
    Molvar, KM
    Missaggia, LJ
    Donnelly, JP
    Williamson, RC
    Twichell, JC
    2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 426 - 427
  • [49] INEXPENSIVE P-I-N PHOTODIODES MATCH FIBER, SOURCE CHARACTERISTICS
    WENDLAND, PH
    MADDEN, RM
    KELLY, B
    ELECTRONICS, 1976, 49 (16): : 101 - 102
  • [50] Thermal effects in multiple-pass p-i-n photodiodes
    Cooper, DG
    Medberry, JB
    Williams, KJ
    OPTOELECTRONIC INTEGRATED CIRCUITS IV, 2000, 3950 : 57 - 68
12345