LAG PROPERTIES OF SILICON p-i-n PHOTODIODES.

A method is presented for calculating the transient characteristics of the photocurrent during carrier drift in the space-charge region of a photodiode in the most general case of an arbitrary absorption coefficient, field distribution, and illumination on the side of n- or p-layer. The calculation reduces to that of solving a system of transcendental equations containing quadratures. Numerical calculations of the transient characteristics are made for silicon p-i-n photodiodes. An analysis of these characteristics shows that in the cases of practical importance they can be approximated by one exponential relationship with a time constant t//0//. //6//3; therefore, the lag of silicon p-i-n photodiodes can be described by this time constant. Graphs showing its calculation are presented.