Transit-time limitations in p-i-n photodiodes

被引：0
|
作者：
Sibley, MJN [1 ]
Bellon, J [1 ]
机构：
[1] Univ Huddersfield, Sch Engn, Dept Elect Engn, Huddersfield HD1 3DH, W Yorkshire, England
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2000年 / 26卷 / 05期
关键词：
photodiodes; p-i-n photodiodes; transit-time limitations; frequency response of photodiodes;
D O I：
10.1002/1098-2760(20000905)26:5<282::AID-MOP2>3.0.CO;2-H
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel derivation for predicting transit-time effects in p-i-n photodiodes is described in which the diode current id found by simple integration. Experimental result obtained from two wide-area photodiodes compare well with theoretical predictions. It is also shown that previously published theory does not agree with these experimental observations. (C) 2000 John Wiley & Sons, Inc.
引用
收藏
页码：282 / 286
页数：5
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