Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction

被引：44

作者：

Ryzhii, Victor ^{[1
,2
]}

Ryzhii, Maxim ^{[1
,2
]}

Mitin, Vladimir ^{[3
]}

Shur, Michael S. ^{[4
]}

机构：

[1] Univ Aizu, Computat Nanoelect Lab, Fukushima 9658580, Japan

[2] CREST, Japan Sci & Technol Agcy, Tokyo 1070075, Japan

[3] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[4] Rensselaer Polytech Inst, Dept Elect Elect & Syst Engn, Troy, NY 12180 USA

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

TRANSPORT; GAS;

D O I：

10.1143/APEX.2.034503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose and analyze a graphene tunneling transit time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer by the applied gate voltages of different polarity. The depleted i-section of the graphene layer (between the gates) serves as both the tunneling injector and the transit region. Using the developed device model, we demonstrate that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range, so that the device can serve as a terahertz oscillator. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.034503

引用

页数：3

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