Low dark current InGaAs(P)/InP p-i-n photodiodes

被引：0
|
作者：
Chen, Yen-Wei [1 ]
Hsu, Wei-Chou [1 ]
Hsu, Rong-Tay [2 ]
Wu, Yue-Huei [2 ]
Chen, Yeong-Jia [1 ]
机构：
[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, 70101, Taiwan
[2] South Epitaxy Corporation, Tainan Science-Based Industrial Park, No. 16 Da-Shun 9th Road, Hsin-Shi, Tainan County, 744, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 7 A期
关键词：
D O I：
10.1143/jjap.42.4249
中图分类号：
学科分类号：
摘要：
Semiconducting indium gallium arsenide
引用
收藏
页码：4249 / 4252
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