Dark current simulation of InP/InGaAs/InP p-i-n photodiode

被引：0
|
作者：
Wang, X. D.
Hu, W. D. [1 ]
Chen, X. S.
Lu, W.
Tang, H. J.
Li, T.
Gong, H. M.
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
来源：
NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES | 2008年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on 2D simulations of dark current for InP/InGaAs/InP p-i-n photodiode by Sentaurus DEVICE. Our simulation result is in good agreement with experiment indicating that generation-recombination is the dominant source of dark current at low bias. Effects of absorption layer thicknesses and doping concentrations on dark current are investigated in detail.
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页码：31 / +
页数：2
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