VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY

被引：0
|
作者：
TSANG, WT
CAMPBELL, JC
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
[2] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
关键词：
D O I：
10.1109/T-ED.1986.22823
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1862 / 1862
页数：1
相关论文
共 50 条
  • [1] VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT InGaAs/InP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY.
    Tsang, W.T.
    Campbell, J.C.
    [J]. 1862, (ED-33):
  • [2] INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    CAMPBELL, JC
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1416 - 1418
  • [3] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, Yen-Wei
    Hsu, Wei-Chou
    Hsu, Rong-Tay
    Wu, Yue-Huei
    Chen, Yeong-Jia
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (7 A): : 4249 - 4252
  • [4] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Hsu, RT
    Wu, YH
    Chen, YJ
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7A): : 4249 - 4252
  • [5] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Chen, YJ
    [J]. PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 95 - 98
  • [6] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY
    CAMPBELL, JC
    TSANG, WT
    QUA, GJ
    JOHNSON, BC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2380 - 2380
  • [7] Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy
    Woo, DH
    Oh, MS
    Koh, EH
    Yahng, JS
    Kim, SH
    Kim, YD
    [J]. MICROELECTRONIC ENGINEERING, 2000, 51-2 : 171 - 179
  • [8] Dark current simulation of InP/InGaAs/InP p-i-n photodiode
    Wang, X. D.
    Hu, W. D.
    Chen, X. S.
    Lu, W.
    Tang, H. J.
    Li, T.
    Gong, H. M.
    [J]. NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2008, : 31 - +
  • [9] METALORGANIC CHEMICAL VAPOR-DEPOSITION INGAAS P-I-N PHOTODIODES WITH EXTREMELY LOW DARK CURRENT
    GALLANT, M
    PUETZ, N
    ZEMEL, A
    SHEPHERD, FR
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (09) : 733 - 735
  • [10] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    CAMPBELL, JC
    QUA, GJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 294 - 296
12345