VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY

被引：0
|
作者：
TSANG, WT
CAMPBELL, JC
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
[2] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
关键词：
D O I：
10.1109/T-ED.1986.22823
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1862 / 1862
页数：1
相关论文
共 50 条
  • [21] LOW DARK CURRENT P-I-N PHOTODIODES WITH AN ANOMALOUS DYNAMIC BEHAVIOR
    BUCHALI, F
    BEHRENDT, R
    HEYMANN, G
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (23) : 3001 - 3002
  • [22] Dark current investigation in thin P-i-N InGaAs photodiodes for nano-resonators
    Verdun, Michael
    Beaudoin, Gregoire
    Portier, Benjamin
    Bardou, Nathalie
    Dupuis, Christophe
    Sagnes, Isabelle
    Haidar, Riad
    Pardo, Fabrice
    Pelouard, Jean-Luc
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 120 (08)
  • [23] Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes
    W. A. Teynor
    K. Vaccaro
    W. R. Buchwald
    H. M. Dauplaise
    C. P. Morath
    A. Davis
    M. A. Roland
    W. R. Clark
    [J]. Journal of Electronic Materials, 2005, 34 : 1368 - 1372
  • [24] Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes
    Teynor, WA
    Vaccaro, K
    Buchwald, WR
    Dauplaise, HM
    Morath, CP
    Davis, A
    Roland, MA
    Clark, WR
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (11) : 1368 - 1372
  • [25] Surface Passivation of InGaAs/InP p-i-n Photodiodes Using Epitaxial Regrowth of InP
    Braga, O. M.
    Delfino, C. A.
    Kawabata, R. M. S.
    Pinto, L. D.
    Vieira, G. S.
    Pires, M. P.
    Souza, P. L.
    Marega, E.
    Carlin, J. A.
    Krishna, S.
    [J]. IEEE SENSORS JOURNAL, 2020, 20 (16) : 9234 - 9244
  • [26] CHARACTERIZATION OF INP/GAINAS/INP HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY FOR HIGH-SPEED P-I-N PHOTODIODES
    CAREY, KW
    WANG, SY
    HULL, R
    TURNER, JE
    OERTEL, D
    BAUER, R
    BIMBERG, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 558 - 563
  • [27] HIGH-SPEED GAAS P-I-N PHOTODIODES GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    PASLASKI, J
    CHEN, HZ
    MORKOC, H
    YARIV, A
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (17) : 1410 - 1412
  • [28] Theoretical study of high-speed InGaAs/InP p-i-n photodiodes for microwave generation
    Malyshev, Sergei
    Chizh, Alexander
    Vasileuski, Yury
    [J]. 2006 INTERNATIONAL TOPICAL MEETING ON MICROWAVES PHOTONICS, 2006, : 97 - +
  • [29] COMPARISON OF INGAAS/INP P-I-N DETECTORS GROWN BY HYDRIDE AND ORGANOMETALLIC VAPOR-PHASE EPITAXY
    BAN, VS
    WOODRUFF, K
    LANGE, M
    OLSEN, GH
    JONES, KA
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) : 814 - 816
  • [30] Growth and realization of InGaAs/InP and InGaAs/InGaAsP quantum photonic devices grown by chemical beam epitaxy
    Rigo, C
    Cacciatore, C
    Campi, D
    Coriasso, C
    Soldani, D
    Stano, A
    [J]. ADVANCES IN CRYSTAL GROWTH, 1996, 203 : 109 - 113
12345