VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY

被引：0
|
作者：
TSANG, WT
CAMPBELL, JC
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
[2] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
关键词：
D O I：
10.1109/T-ED.1986.22823
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1862 / 1862
页数：1
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