Detection of recombination inhomogeneities in amorphous silicon

被引：0

作者：

Dzyubenko, G.M.

Zarif'yants, Yu.A.

Obyden, S.K.

Perlovskiy, G.A.

Saparin, G.V.

Chukichev, M.V.

机构：

来源：

Soviet journal of communications technology & electronics | 1988年 / 33卷 / 09期

关键词：

Amorphous Silicon - Electron Beam Recording - Recombination Inhomogeneities - Scanning Electron Microscope - Schottky Diodes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：153 / 154

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