Transient photoconductivity for the identification of spatial inhomogeneities in the defect density in amorphous silicon

被引:0
|
作者
Brüggemann, R [1 ]
Main, C
Reynolds, S
机构
[1] Carl von Ossietzky Univ Oldensburg, Fachbereich Phys, D-26111 Oldenburg, Germany
[2] Univ Abertay Dundee, Sch Sci & Engn, Dundee DD1 1HG, Scotland
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2002年 / 191卷 / 02期
关键词
D O I
10.1002/1521-396X(200206)191:2<530::AID-PSSA530>3.0.CO;2-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We achieved the probing of near-surface regions in hydrogenated amorphous silicon by directing green-pulsed laser light with a short absorption depth either through the air/silicon or the glass/ silicon interface. Transient photoconductivity under these conditions results in different decay behaviors of the photocurrent when the sample is illuminated from either side. By application of a Fourier transform technique on the photocurrent decay data we identify spatial inhomogeneities in the deep-defect density that are responsible for these differences. When compared with the defect density in the bulk of the film, obtained from probing the sample with homogeneously absorbed light, we can thus reveal a possible increase in the defect density towards either the air/silicon or silicon/substrate interface which remains undiscovered by other experimental techniques.
引用
收藏
页码:530 / 534
页数:5
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