Quantitative ASAXS of germanium inhomogeneities in amorphous silicon-germanium alloys

被引：18

作者：

Goerigk, G

Williamson, DL

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2001年 / 281卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(01)00309-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The nanostructure of hydrogenated amorphous silicon germanium alloys, a-Si(1-x)Ge(x):H (x similar to 0.15 to 0.57), prepared by different plasma enhanced chemical vapor deposition (PECVD) techniques was analyzed by anomalous small-angle X-ray scattering (ASAXS) experiments. For alloys with x > 0.2 the Ge component was found to be inhomogeneously distributed with correlation lengths from 0.6 to 1.6 nm. From the analysis of extended ASAXS measurements at 16 X-ray energies in combination with densitometric measurements the volume fractions, densities and Ge-concentrations of the inhomogeneities were deduced. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：181 / 188

页数：8

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