ELECTRONIC STATES IN THE GAP OF AMORPHOUS SILICON-GERMANIUM ALLOYS

被引：6
|
作者：
STUTZMANN, M [1 ]
TSAI, CC [1 ]
STREET, RA [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷
关键词：
D O I：
10.1016/0022-3093(87)90243-2
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：1011 / 1014
页数：4
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