Boron diffusion in amorphous silicon-germanium alloys

被引：3

作者：

Edelman, L. A. ^{[1
]}

Phen, M. S. ^{[1
]}

Jones, K. S. ^{[1
]}

Elliman, R. G. ^{[2
]}

Rubin, L. M. ^{[3
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[3] Axcelis Technol Inc, Beverly, MA 01915 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期

关键词：

D O I：

10.1063/1.2919085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Ge alloying on B diffusion in amorphous Si1-xGex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si. (C) 2008 American Institute of Physics.

引用

页数：3

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